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onsemi FDMS8320LDC

N-Channel Power Trench MOSFET, Dual CoolTM 56, 40V, 192A, 1.1m

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Compliance

Lead Free
Lead Free
Radiation Hardening
No
RoHS
1.1 mΩ

Dimensions

Height
950 µm
Length
5.1 mm
Width
IBS

Physical

Mount
-55 °C
Number of Pins
8
Weight
Compliant

Supply Chain

Lifecycle Status
Production

Technical

Continuous Drain Current (ID)
44 A
Drain to Source Breakdown Voltage
40 V
Drain to Source Resistance
800 µΩ
Drain to Source Voltage (Vdss)
800 µΩ
Element Configuration
Single
Fall Time
14 ns
Gate to Source Voltage (Vgs)
20 V
Input Capacitance
950 µm
Max Junction Temperature (Tj)
150 °C
Max Operating Temperature
150 °C
Max Power Dissipation
150 °C
Min Operating Temperature
-55 °C
Number of Channels
1
Number of Elements
1
Power Dissipation
3.2 W
Rds On Max
1.1 mΩ
Rise Time
15 ns
Turn-Off Delay Time
69 ns
Turn-On Delay Time
19 ns

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