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onsemi FDMS6673BZ

P-Channel PowerTrench MOSFET -30V, -82A, 6.8m

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Compliance

Lead Free
Lead Free
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS
6.8 mΩ

Dimensions

Height
1.05 mm
Length
5 mm
Width
6 mm

Physical

Contact Plating
Tin
Mount
-55 °C
Number of Pins
8
Weight
IBS

Supply Chain

Lifecycle Status
Production

Technical

Continuous Drain Current (ID)
-15.2 A
Drain to Source Breakdown Voltage
-30 V
Drain to Source Resistance
5.2 mΩ
Drain to Source Voltage (Vdss)
5.2 mΩ
Element Configuration
Single
Fall Time
79 ns
Gate to Source Voltage (Vgs)
25 V
Input Capacitance
1.1 mm
Max Junction Temperature (Tj)
150 °C
Max Operating Temperature
150 °C
Max Power Dissipation
150 °C
Min Operating Temperature
-55 °C
Number of Channels
1
Number of Elements
1
Power Dissipation
2.5 W
Rds On Max
6.8 mΩ
Rise Time
28 ns
Threshold Voltage
-1.8 V
Turn-Off Delay Time
Compliant
Turn-On Delay Time
14 ns

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