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onsemi FDMS4D0N12C

PowerTrench MOSFET, N-Channel Shielded Gate, 120V, 118A, 4.0m

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Compliance

RoHS
Compliant

Dimensions

Height
1.1 mm

Supply Chain

Lifecycle Status
Production

Technical

Continuous Drain Current (ID)
18.5 A
Drain to Source Breakdown Voltage
120 V
Drain to Source Resistance
3.3 mΩ
Drain to Source Voltage (Vdss)
120 V
Gate to Source Voltage (Vgs)
20 V
Max Junction Temperature (Tj)
150 °C
Max Operating Temperature
150 °C
Min Operating Temperature
-55 °C
Number of Channels
1
Power Dissipation
2.7 W
Turn-Off Delay Time
45 ns
Turn-On Delay Time
25 ns

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