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onsemi FDMS3669S

Transistor MOSFET Array Dual N-CH 30V 43A/75A 8-Pin PQFN T/R

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Compliance

Radiation Hardening
No
RoHS
10 mΩ

Dimensions

Height
1.1 mm
Length
5 mm
Width
5.9 mm

Physical

Mount
-55 °C
Number of Pins
8
Weight
Compliant

Supply Chain

Lifecycle Status
Production

Technical

Continuous Drain Current (ID)
60 A
Drain to Source Breakdown Voltage
30 V
Drain to Source Resistance
10 mΩ
Drain to Source Voltage (Vdss)
10 mΩ
Fall Time
3 ns
Gate to Source Voltage (Vgs)
20 V
Input Capacitance
1.605 nF
Max Junction Temperature (Tj)
150 °C
Max Operating Temperature
150 °C
Max Power Dissipation
150 °C
Min Operating Temperature
-55 °C
Number of Channels
2
Number of Elements
2
Rds On Max
10 mΩ
Rise Time
3 ns
Turn-Off Delay Time
24 ns

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