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onsemi FDMS3664S

Asymmetric Dual N-Channel PowerTrench Power Stage MOSFET 30V

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Compliance

Radiation Hardening
No
RoHS
Compliant

Dimensions

Height
1.1 mm
Length
5 mm
Width
5.9 mm

Physical

Mount
Surface Mount
Number of Pins
8
Weight
171 mg

Supply Chain

Lifecycle Status
Production

Technical

Continuous Drain Current (ID)
25 A
Drain to Source Breakdown Voltage
30 V
Drain to Source Resistance
3.2 mΩ
Drain to Source Voltage (Vdss)
30 V
Element Configuration
Dual
Gate to Source Voltage (Vgs)
12 V
Input Capacitance
1.765 nF
Max Junction Temperature (Tj)
150 °C
Max Operating Temperature
150 °C
Max Power Dissipation
1 W
Min Operating Temperature
-55 °C
Number of Channels
2
Number of Elements
2
Power Dissipation
1 W
Rds On Max
8 mΩ
Turn-Off Delay Time
19 ns
Turn-On Delay Time
7.7 ns

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