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onsemi FDMS3660S

Transistor MOSFET Array Dual N-CH 30V 60A/145A 8-Pin Power 56 T/R

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Compliance

Lead Free
Lead Free
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS
Compliant

Dimensions

Height
1.1 mm
Length
5 mm
Width
5.9 mm

Physical

Contact Plating
Tin
Mount
Surface Mount
Number of Pins
8
Weight
171 mg

Supply Chain

Lifecycle Status
Production

Technical

Continuous Drain Current (ID)
30 A
Drain to Source Breakdown Voltage
30 V
Drain to Source Resistance
1.8 mΩ
Drain to Source Voltage (Vdss)
30 V
Element Configuration
Dual
Gate to Source Voltage (Vgs)
12 V
Input Capacitance
1.765 nF
Max Junction Temperature (Tj)
150 °C
Max Operating Temperature
150 °C
Max Power Dissipation
2.5 W
Min Operating Temperature
-55 °C
Nominal Vgs
1.5 V
Number of Channels
2
Number of Elements
2
Packaging
Tape and Reel
Power Dissipation
1 W
Rds On Max
8 mΩ
Threshold Voltage
1.5 V
Turn-Off Delay Time
8541290080, 8541290080|8541290080|8541290080|8541290080|8541290080
Turn-On Delay Time
IBS

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