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onsemi FDMS039N08B

N-Channel PowerTrench MOSFET 80V, 100A, 3.9m

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Compliance

Radiation Hardening
No
RoHS
3.9 mΩ

Dimensions

Height
1.05 mm
Length
5 mm
Width
IBS

Physical

Mount
-55 °C
Number of Pins
8
Weight
68.1 mg

Supply Chain

Lifecycle Status
Production

Technical

Continuous Drain Current (ID)
19.4 A
Drain to Source Breakdown Voltage
80 V
Drain to Source Resistance
3.2 mΩ
Drain to Source Voltage (Vdss)
3.2 mΩ
Element Configuration
Single
Fall Time
17 ns
Gate to Source Voltage (Vgs)
20 V
Input Capacitance
1.1 mm
Max Junction Temperature (Tj)
150 °C
Max Operating Temperature
150 °C
Max Power Dissipation
150 °C
Min Operating Temperature
-55 °C
Number of Channels
1
Number of Elements
1
Packaging
Tape and Reel
Power Dissipation
2.5 W
Rds On Max
3.9 mΩ
Rise Time
25 ns
Turn-Off Delay Time
48 ns
Turn-On Delay Time
Compliant

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