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onsemi FDMS0312S

MOSFET, N CH, 30V, 42A, POWER 56; Transistor Polarity: N Channel; Continuous Drai

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Compliance

Lead Free
Lead Free
Radiation Hardening
No
RoHS
4.9 mΩ

Dimensions

Height
1.05 mm
Length
5 mm
Width
IBS

Physical

Contact Plating
Tin
Mount
-55 °C
Number of Pins
8
Weight
Compliant

Supply Chain

Lifecycle Status
Production

Technical

Continuous Drain Current (ID)
19 A
Drain to Source Breakdown Voltage
30 V
Drain to Source Resistance
3.6 mΩ
Drain to Source Voltage (Vdss)
3.6 mΩ
Element Configuration
Single
Fall Time
4 ns
Gate to Source Voltage (Vgs)
20 V
Input Capacitance
1.1 mm
Max Junction Temperature (Tj)
150 °C
Max Operating Temperature
150 °C
Max Power Dissipation
150 °C
Min Operating Temperature
-55 °C
Number of Channels
1
Number of Elements
1
Packaging
Tape & Reel (TR)
Power Dissipation
2.5 W
Rds On Max
4.9 mΩ
Rise Time
5 ns
Turn-Off Delay Time
28 ns
Turn-On Delay Time
12 ns

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