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onsemi FDMQ8203

This quad mosfet solution provides ten-fold improvement in power dissipation over diode bridge.

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Compliance

Lead Free
Lead Free
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS
110 mΩ

Dimensions

Height
800 µm
Length
5 mm
Width
IBS

Physical

Mount
Surface Mount
Number of Pins
12
Weight
Compliant

Supply Chain

Lifecycle Status
Production

Technical

Continuous Drain Current (ID)
2.6 A
Drain to Source Breakdown Voltage
-80 V
Drain to Source Resistance
161 mΩ
Drain to Source Voltage (Vdss)
80 V
Element Configuration
Dual
Fall Time
2.7 ns
Gate to Source Voltage (Vgs)
20 V
Input Capacitance
210 pF
Max Junction Temperature (Tj)
150 °C
Max Operating Temperature
150 °C
Max Power Dissipation
2.5 W
Min Operating Temperature
-55 °C
Nominal Vgs
3 V
Number of Channels
4
Number of Elements
4
Packaging
Tape and Reel
Power Dissipation
2.5 W
Rds On Max
110 mΩ
Rise Time
2.8 ns
Threshold Voltage
3 V

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