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onsemi FDME910PZT

P-Channel 20 V 8 A 24 mOhm Power Trench Mosfet - MicorFET

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Compliance

Lead Free
Lead Free
Radiation Hardening
No
RoHS
24 mΩ

Dimensions

Height
500 µm
Length
1.6 mm
Width
IBS

Physical

Mount
-55 °C
Number of Pins
6
Weight
Compliant

Supply Chain

Lifecycle Status
Obsolete

Technical

Continuous Drain Current (ID)
8:00 AM
Drain to Source Breakdown Voltage
8 A
Drain to Source Resistance
24 mΩ
Drain to Source Voltage (Vdss)
24 mΩ
Element Configuration
Single
Fall Time
46 ns
Gate to Source Voltage (Vgs)
8 V
Input Capacitance
500 µm
Max Operating Temperature
150 °C
Max Power Dissipation
150 °C
Min Operating Temperature
-55 °C
Number of Elements
1
Power Dissipation
2.1 W
Rds On Max
24 mΩ
Rise Time
11 ns
Turn-Off Delay Time
87 ns
Turn-On Delay Time
9 ns

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