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onsemi FDME510PZT

P-Channel PowerTrench® MOSFET -20V, -6A, 37mΩ

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Compliance

Radiation Hardening
No
REACH SVHC
No SVHC
RoHS
37 mΩ

Dimensions

Height
500 µm
Length
1.6 mm
Width
1.6 mm

Physical

Mount
Surface Mount
Number of Pins
6
Weight
30 mg

Supply Chain

Lifecycle Status
Production

Technical

Continuous Drain Current (ID)
-6 A
Drain to Source Breakdown Voltage
-20 V
Drain to Source Resistance
31 mΩ
Drain to Source Voltage (Vdss)
-20 V
Element Configuration
Single
Fall Time
54 ns
Gate to Source Voltage (Vgs)
8 V
Input Capacitance
1.49 nF
Max Junction Temperature (Tj)
150 °C
Max Operating Temperature
150 °C
Max Power Dissipation
2.1 W
Min Operating Temperature
-55 °C
Nominal Vgs
-500 mV
Number of Channels
1
Number of Elements
1
Power Dissipation
700 mW
Rds On Max
37 mΩ
Rise Time
10 ns
Threshold Voltage
-500 mV
Turn-Off Delay Time
93 ns
Turn-On Delay Time
6.5 ns

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