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onsemi FDME1024NZT

Dual N-Channel Power Trench MOSFET 20V, 3.8A, 66m

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Compliance

Radiation Hardening
No
REACH SVHC
No SVHC
RoHS
Compliant

Dimensions

Height
550 µm
Length
1.6 mm
Width
1.6 mm

Physical

Mount
Surface Mount
Number of Pins
6
Weight
25.2 mg

Supply Chain

Lifecycle Status
Production

Technical

Continuous Drain Current (ID)
3.8 A
Drain to Source Breakdown Voltage
20 V
Drain to Source Resistance
55 mΩ
Drain to Source Voltage (Vdss)
20 V
Element Configuration
Dual
Fall Time
1.7 ns
Gate to Source Voltage (Vgs)
8 V
Input Capacitance
300 pF
Max Junction Temperature (Tj)
150 °C
Max Operating Temperature
150 °C
Max Power Dissipation
1.4 W
Min Operating Temperature
-55 °C
Number of Channels
2
Number of Elements
2
Power Dissipation
600 mW
Rds On Max
66 mΩ
Rise Time
2 ns
Threshold Voltage
700 mV
Turn-Off Delay Time
15 ns
Turn-On Delay Time
4.5 ns

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