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onsemi FDMD8560L

MOSFET, DUAL N-CH, 60V, 93A, PQFN-10; Transistor Polarity: Dual N Channel;

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Compliance

REACH SVHC
No SVHC
RoHS
Compliant

Dimensions

Height
800 µm

Physical

Mount
-55 °C
Number of Pins
8
Weight
IBS

Supply Chain

Lifecycle Status
EOL

Technical

Continuous Drain Current (ID)
22 A
Drain to Source Breakdown Voltage
60 V
Drain to Source Resistance
2.5 mΩ
Drain to Source Voltage (Vdss)
2.5 mΩ
Gate to Source Voltage (Vgs)
20 V
Input Capacitance
800 µm
Max Junction Temperature (Tj)
OBSOLETE
Max Operating Temperature
150 °C
Max Power Dissipation
150 °C
Min Operating Temperature
-55 °C
Number of Channels
2
Power Dissipation
2.2 W
Rds On Max
3.2 mΩ
Threshold Voltage
1.6 V
Turn-Off Delay Time
57 ns
Turn-On Delay Time
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