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onsemi FDMD84100

Dual N-Channel PowerTrench MOSFET 100V, 21A, 20m

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Compliance

RoHS
Compliant

Dimensions

Height
800 µm
Length
5.1 mm
Width
3.4 mm

Physical

Mount
Surface Mount
Number of Pins
8
Weight
153.4014 mg

Supply Chain

Lifecycle Status
EOL

Technical

Continuous Drain Current (ID)
7 A
Drain to Source Breakdown Voltage
100 V
Drain to Source Resistance
16 mΩ
Drain to Source Voltage (Vdss)
100 V
Element Configuration
Dual
Fall Time
2.8 ns
Gate to Source Voltage (Vgs)
20 V
Input Capacitance
980 pF
Max Junction Temperature (Tj)
150 °C
Max Operating Temperature
150 °C
Max Power Dissipation
23 W
Min Operating Temperature
-55 °C
Number of Channels
2
Power Dissipation
2.1 W
Rds On Max
20 mΩ
Rise Time
2.6 ns
Turn-Off Delay Time
14 ns
Turn-On Delay Time
8.4 ns

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