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onsemi FDMD8260L

Transistor MOSFET Array Dual N-CH 60V 64A 12-Pin PQFN T/R

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Compliance

RoHS
Compliant

Dimensions

Height
800 µm

Physical

Mount
-55 °C
Number of Pins
12
Weight
8541290080, 8541290080|8541290080|8541290080|8541290080|8541290080

Supply Chain

Lifecycle Status
EOL

Technical

Continuous Drain Current (ID)
15 A
Drain to Source Breakdown Voltage
60 V
Drain to Source Resistance
4.5 mΩ
Drain to Source Voltage (Vdss)
4.5 mΩ
Element Configuration
Dual
Gate to Source Voltage (Vgs)
20 V
Input Capacitance
800 µm
Max Junction Temperature (Tj)
150 °C
Max Operating Temperature
150 °C
Max Power Dissipation
150 °C
Min Operating Temperature
-55 °C
Number of Channels
2
Power Dissipation
1 W
Rds On Max
5.8 mΩ
Turn-Off Delay Time
47 ns
Turn-On Delay Time
12 ns

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