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onsemi FDMD82100L

Transistor MOSFET Array Dual N-CH 100V 24A 12-Pin PQFN T/R

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Compliance

RoHS
Compliant

Dimensions

Height
800 µm

Physical

Case/Package
100
Mount
Surface Mount
Number of Pins
12
Weight
82.3188 mg

Supply Chain

Lifecycle Status
EOL

Technical

Continuous Drain Current (ID)
24 A
Drain to Source Breakdown Voltage
100 V
Drain to Source Resistance
13.5 mΩ
Drain to Source Voltage (Vdss)
100 V
Element Configuration
Dual
Fall Time
2.9 ns
Gate to Source Voltage (Vgs)
20 V
Input Capacitance
1.585 nF
Max Junction Temperature (Tj)
150 °C
Max Operating Temperature
150 °C
Max Power Dissipation
1 W
Min Operating Temperature
-55 °C
Number of Channels
2
Packaging
Tape & Reel (TR)
Power Dissipation
38 W
Rds On Max
19.5 mΩ
Rise Time
2.8 ns
Turn-Off Delay Time
21 ns
Turn-On Delay Time
7.9 ns

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