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onsemi FDMD82100

Dual N-Channel Power Trench MOSFET 100V, 25A, 19m

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Compliance

RoHS
Compliant

Dimensions

Height
800 µm

Physical

Mount
Surface Mount
Number of Pins
12
Weight
82.3188 mg

Supply Chain

Lifecycle Status
EOL

Technical

Continuous Drain Current (ID)
7 A
Drain to Source Breakdown Voltage
100 V
Drain to Source Resistance
15 mΩ
Drain to Source Voltage (Vdss)
100 V
Element Configuration
Dual
Fall Time
3.3 ns
Gate to Source Voltage (Vgs)
20 V
Input Capacitance
1.07 nF
Max Junction Temperature (Tj)
150 °C
Max Operating Temperature
150 °C
Max Power Dissipation
1 W
Min Operating Temperature
-55 °C
Number of Channels
2
Packaging
Cut Tape (CT)
Power Dissipation
2.1 W
Rds On Max
19 mΩ
Rise Time
3.2 ns
Turn-Off Delay Time
15 ns
Turn-On Delay Time
9.4 ns

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