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onsemi FDMC8882

N-Channel Power Trench MOSFET 30V, 16A, 14.3m

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Compliance

Lead Free
Lead Free
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS
Compliant

Dimensions

Height
800 µm
Length
3.3 mm
Width
3.3 mm

Physical

Case/Package
0124
Contact Plating
Gold
Mount
Surface Mount
Number of Pins
8
Weight
200 mg

Supply Chain

Lifecycle Status
Production

Technical

Continuous Drain Current (ID)
10.5 A
Drain to Source Breakdown Voltage
30 V
Drain to Source Resistance
12.4 mΩ
Drain to Source Voltage (Vdss)
30 V
Element Configuration
Single
Fall Time
2 ns
Gate to Source Voltage (Vgs)
20 V
Input Capacitance
945 pF
Max Junction Temperature (Tj)
150 °C
Max Operating Temperature
150 °C
Max Power Dissipation
18 W
Min Operating Temperature
-55 °C
Nominal Vgs
1.9 V
Number of Channels
1
Number of Elements
1
Packaging
Tape & Reel (TR)
Power Dissipation
2.3 W
Rds On Max
14.3 mΩ
Resistance
14.3 MΩ
Rise Time
3 ns
Threshold Voltage
1.9 V
Turn-Off Delay Time
17 ns
Turn-On Delay Time
7 ns

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