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onsemi FDMC86320

N-Channel Power Trench MOSFET 80V, 22A, 11.7m

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Compliance

Lead Free
Lead Free
Radiation Hardening
No
RoHS
11.7 mΩ

Dimensions

Height
750 µm
Length
3.3 mm
Width
IBS

Physical

Mount
-55 °C
Number of Pins
8
Weight
Compliant

Supply Chain

Lifecycle Status
Production

Technical

Continuous Drain Current (ID)
22 A
Drain to Source Breakdown Voltage
80 V
Drain to Source Resistance
11.7 mΩ
Drain to Source Voltage (Vdss)
11.7 mΩ
Element Configuration
Single
Fall Time
5 ns
Gate to Source Voltage (Vgs)
20 V
Input Capacitance
750 µm
Max Operating Temperature
150 °C
Max Power Dissipation
150 °C
Min Operating Temperature
-55 °C
Number of Elements
1
Power Dissipation
40 W
Rds On Max
11.7 mΩ
Rise Time
8 ns
Turn-Off Delay Time
20 ns
Turn-On Delay Time
15 ns

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