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onsemi FDMC86261P

P-Channel PowerTrench MOSFET -150V, -9A, 160m

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Compliance

Radiation Hardening
No
RoHS
160 mΩ

Dimensions

Height
725 µm
Length
3.3 mm
Width
IBS

Physical

Contact Plating
Gold
Mount
-55 °C
Number of Pins
8
Weight
165.33333 mg

Supply Chain

Lifecycle Status
Production

Technical

Continuous Drain Current (ID)
-2.7 A
Drain to Source Breakdown Voltage
-150 V
Drain to Source Resistance
130 mΩ
Drain to Source Voltage (Vdss)
130 mΩ
Element Configuration
Single
Fall Time
20 ns
Gate to Source Voltage (Vgs)
25 V
Input Capacitance
800 µm
Max Junction Temperature (Tj)
150 °C
Max Operating Temperature
150 °C
Max Power Dissipation
150 °C
Min Operating Temperature
-55 °C
Number of Channels
1
Number of Elements
1
Packaging
Tape & Reel
Power Dissipation
2.3 W
Rds On Max
160 mΩ
Rise Time
10 ns
Turn-Off Delay Time
18 ns
Turn-On Delay Time
Compliant

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