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onsemi FDMC86259P

P-Channel PowerTrench MOSFET -150V, -13A, 107m

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Compliance

RoHS
107 mΩ

Dimensions

Height
750 µm
Length
3.4 mm
Width
IBS

Physical

Mount
-55 °C
Number of Pins
8
Weight
152.7 mg

Supply Chain

Lifecycle Status
Production

Technical

Continuous Drain Current (ID)
-3.2 A
Drain to Source Breakdown Voltage
-150 V
Drain to Source Resistance
87 mΩ
Drain to Source Voltage (Vdss)
87 mΩ
Element Configuration
Single
Fall Time
9.6 ns
Gate to Source Voltage (Vgs)
25 V
Input Capacitance
800 µm
Max Junction Temperature (Tj)
150 °C
Max Operating Temperature
150 °C
Max Power Dissipation
150 °C
Min Operating Temperature
-55 °C
Number of Channels
1
Power Dissipation
2.3 W
Rds On Max
107 mΩ
Rise Time
3.3 ns
Turn-Off Delay Time
22 ns
Turn-On Delay Time
Compliant

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