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onsemi FDMC86248

MOSFET, N-CH, 150V, 8PQFN; Transistor Polarity: N Channel; Continuous Drain Curre

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Compliance

Radiation Hardening
No
REACH SVHC
No SVHC
RoHS
90 mΩ

Dimensions

Height
1.05 mm
Length
3.3 mm
Width
IBS

Physical

Mount
-55 °C
Number of Pins
8
Weight
Compliant

Supply Chain

Lifecycle Status
Production

Technical

Continuous Drain Current (ID)
3.4 A
Drain to Source Breakdown Voltage
150 V
Drain to Source Resistance
69 mΩ
Drain to Source Voltage (Vdss)
69 mΩ
Element Configuration
Single
Fall Time
2.8 ns
Gate to Source Voltage (Vgs)
20 V
Input Capacitance
1.1 mm
Max Junction Temperature (Tj)
150 °C
Max Operating Temperature
150 °C
Max Power Dissipation
150 °C
Min Operating Temperature
-55 °C
Nominal Vgs
3.2 V
Number of Channels
1
Number of Elements
1
Power Dissipation
2.3 W
Rds On Max
90 mΩ
Rise Time
1.4 ns
Turn-Off Delay Time
11 ns
Turn-On Delay Time
6.9 ns

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