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onsemi FDMC8622

N-Channel Shielded Gate Power Trench MOSFET 100V, 16A, 56m

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Compliance

Radiation Hardening
No
REACH SVHC
No SVHC
RoHS
Compliant

Dimensions

Height
800 µm
Length
3.3 mm
Width
3.3 mm

Physical

Mount
Surface Mount
Number of Pins
8
Weight
200 mg

Supply Chain

Lifecycle Status
Production

Technical

Continuous Drain Current (ID)
16 A
Drain to Source Breakdown Voltage
100 V
Drain to Source Resistance
43.7 mΩ
Drain to Source Voltage (Vdss)
100 V
Element Configuration
Single
Fall Time
2.2 ns
Gate to Source Voltage (Vgs)
20 V
Input Capacitance
402 pF
Max Junction Temperature (Tj)
150 °C
Max Operating Temperature
150 °C
Max Power Dissipation
31 W
Min Operating Temperature
-55 °C
Nominal Vgs
2.9 V
Number of Channels
1
Number of Elements
1
Packaging
Tape & Reel (TR)
Power Dissipation
31 W
Rds On Max
56 mΩ
Rise Time
1.6 ns
Threshold Voltage
2.9 V
Turn-Off Delay Time
10.2 ns
Turn-On Delay Time
5.9 ns

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