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onsemi FDMC86160

MOSFET, N-CH, 100V, 8PQFN; Transistor Polarity: N Channel; Continuous Drain Curre

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Compliance

Lead Free
Lead Free
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS
Compliant

Dimensions

Height
800 µm
Length
3.3 mm
Width
3.3 mm

Physical

Mount
Surface Mount
Number of Pins
8
Weight
152.7 mg

Supply Chain

Lifecycle Status
Production

Technical

Continuous Drain Current (ID)
9 A
Drain to Source Breakdown Voltage
100 V
Drain to Source Resistance
11.2 mΩ
Drain to Source Voltage (Vdss)
100 V
Element Configuration
Single
Fall Time
3.4 ns
Gate to Source Voltage (Vgs)
20 V
Input Capacitance
1.29 nF
Max Junction Temperature (Tj)
150 °C
Max Operating Temperature
150 °C
Max Power Dissipation
54 W
Min Operating Temperature
-55 °C
Number of Channels
1
Number of Elements
1
Power Dissipation
2.3 W
Rds On Max
14 mΩ
Rise Time
3.6 ns
Threshold Voltage
2.9 V
Turn-Off Delay Time
16 ns
Turn-On Delay Time
9.7 ns

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