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onsemi FDMC86116LZ

N-Channel Power Trench MOSFET 100V, 7.5A, 103m

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Compliance

Lead Free
Lead Free
Radiation Hardening
No
RoHS
Compliant

Dimensions

Height
800 µm
Length
3.3 mm
Width
3.3 mm

Physical

Contact Plating
Gold
Mount
Surface Mount
Number of Pins
8
Weight
180 mg

Supply Chain

Lifecycle Status
Production

Technical

Continuous Drain Current (ID)
3.3 A
Drain to Source Breakdown Voltage
100 V
Drain to Source Resistance
79 mΩ
Drain to Source Voltage (Vdss)
100 V
Element Configuration
Single
Fall Time
1.4 ns
Gate to Source Voltage (Vgs)
20 V
Input Capacitance
310 pF
Max Junction Temperature (Tj)
150 °C
Max Operating Temperature
150 °C
Max Power Dissipation
2.3 W
Min Operating Temperature
-55 °C
Number of Channels
1
Number of Elements
1
Packaging
Tape and Reel
Power Dissipation
2.3 W
Rds On Max
103 mΩ
Rise Time
1.3 ns
Turn-Off Delay Time
10 ns
Turn-On Delay Time
4.5 ns

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