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onsemi FDMC86102L

N-Channel Shielded Gate PowerTrench MOSFET 100V , 18A, 23m

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Compliance

Lead Free
Lead Free
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS
24 MΩ

Dimensions

Height
750 µm
Length
3.3 mm
Width
3.3 mm

Physical

Case/Package
SOIC
Mount
-55 °C
Number of Pins
8
Weight
IBS

Supply Chain

Lifecycle Status
Production

Technical

Continuous Drain Current (ID)
7:00 AM
Drain to Source Breakdown Voltage
7 A
Drain to Source Resistance
18.9 mΩ
Drain to Source Voltage (Vdss)
18.9 mΩ
Element Configuration
Single
Fall Time
2.4 ns
Gate to Source Voltage (Vgs)
20 V
Input Capacitance
800 µm
Max Junction Temperature (Tj)
150 °C
Max Operating Temperature
150 °C
Max Power Dissipation
150 °C
Min Operating Temperature
-55 °C
Number of Channels
1
Number of Elements
1
Packaging
Cut Tape
Power Dissipation
2.3 W
Rds On Max
23 mΩ
Resistance
24 MΩ
Rise Time
23 mΩ
Threshold Voltage
2.2 ns
Turn-Off Delay Time
Compliant
Turn-On Delay Time
7.7 ns

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