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onsemi FDMC86102

N-Channel Shielded Gate Power Trench MOSFET 100V, 20A, 24m

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Compliance

Lead Free
Lead Free
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS
Compliant

Dimensions

Height
1.15 mm
Length
3.4 mm
Width
3.4 mm

Physical

Mount
Surface Mount
Number of Pins
8
Weight
32.13 mg

Supply Chain

Lifecycle Status
Production

Technical

Continuous Drain Current (ID)
7 A
Drain to Source Breakdown Voltage
100 V
Drain to Source Resistance
19.4 mΩ
Drain to Source Voltage (Vdss)
100 V
Element Configuration
Single
Fall Time
4 ns
Gate to Source Voltage (Vgs)
20 V
Input Capacitance
965 pF
Max Junction Temperature (Tj)
150 °C
Max Operating Temperature
150 °C
Max Power Dissipation
41 W
Min Operating Temperature
-55 °C
Nominal Vgs
3.1 V
Number of Channels
1
Number of Elements
1
Power Dissipation
2.3 W
Rds On Max
24 mΩ
Resistance
24 MΩ
Rise Time
4 ns
Threshold Voltage
3.1 V
Turn-Off Delay Time
14 ns
Turn-On Delay Time
8 ns

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