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onsemi FDMC86012

N-Channel Power Trench MOSFET 30V, 88A, 2.7m

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Compliance

Radiation Hardening
No
RoHS
2.7 mΩ

Physical

Mount
-55 °C
Number of Pins
8
Weight
152.7 mg

Supply Chain

Lifecycle Status
Production

Technical

Continuous Drain Current (ID)
23 A
Drain to Source Breakdown Voltage
30 V
Drain to Source Resistance
2.7 mΩ
Drain to Source Voltage (Vdss)
2.7 mΩ
Element Configuration
Single
Fall Time
8 ns
Gate to Source Voltage (Vgs)
12 V
Input Capacitance
5.075 nF
Max Operating Temperature
150 °C
Max Power Dissipation
150 °C
Min Operating Temperature
-55 °C
Number of Elements
1
Packaging
Tape & Reel
Power Dissipation
54 W
Rds On Max
2.7 mΩ
Rise Time
11 ns
Turn-Off Delay Time
43 ns
Turn-On Delay Time
Compliant

合规性文件

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