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onsemi FDMC8554

N-Channel Power Trench MOSFET 20V, 16.5A, 5m

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Compliance

Lead Free
Lead Free
Radiation Hardening
No
RoHS
5 mΩ

Dimensions

Height
950 µm
Length
3 mm
Width
3 mm

Physical

Contact Plating
Tin
Mount
Surface Mount
Number of Pins
8
Weight
165.33333 mg

Supply Chain

Lifecycle Status
Production

Technical

Continuous Drain Current (ID)
16.5 A
Drain to Source Breakdown Voltage
20 V
Drain to Source Resistance
3.6 mΩ
Drain to Source Voltage (Vdss)
20 V
Element Configuration
Single
Fall Time
7 ns
Gate to Source Voltage (Vgs)
20 V
Input Capacitance
3.38 nF
Max Operating Temperature
150 °C
Max Power Dissipation
2 W
Min Operating Temperature
-55 °C
Number of Elements
1
Power Dissipation
2 W
Rds On Max
5 mΩ
Rise Time
10 ns
Turn-Off Delay Time
32 ns
Turn-On Delay Time
IBS

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