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onsemi FDMC8030

Dual N-Channel Power Trench MOSFET 40V, 12A, 10m

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Compliance

Radiation Hardening
No
RoHS
Compliant

Dimensions

Height
800 µm
Length
3 mm
Width
3 mm

Physical

Mount
Surface Mount
Number of Pins
8
Weight
196 mg

Supply Chain

Lifecycle Status
Production

Technical

Continuous Drain Current (ID)
12 A
Drain to Source Breakdown Voltage
40 V
Drain to Source Resistance
8 mΩ
Drain to Source Voltage (Vdss)
40 V
Element Configuration
Dual
Fall Time
3 ns
Gate to Source Voltage (Vgs)
12 V
Input Capacitance
1.975 nF
Max Junction Temperature (Tj)
150 °C
Max Operating Temperature
150 °C
Max Power Dissipation
800 mW
Min Operating Temperature
-55 °C
Number of Channels
2
Number of Elements
1
Packaging
Tape and Reel
Power Dissipation
1.9 W
Rds On Max
10 mΩ
Rise Time
3 ns
Threshold Voltage
1.5 V
Turn-Off Delay Time
19 ns
Turn-On Delay Time
7 ns

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