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onsemi FDMC6675BZ

P-Channel Power Trench MOSFET -30V, -20A, 14.4m

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Compliance

Lead Free
Lead Free
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS
Compliant

Dimensions

Height
800 µm
Length
3.3 mm
Width
3.3 mm

Physical

Mount
Surface Mount
Number of Pins
8
Weight
200 mg

Supply Chain

Lifecycle Status
NRND

Technical

Continuous Drain Current (ID)
-20 A
Drain to Source Breakdown Voltage
-30 V
Drain to Source Resistance
10.7 mΩ
Drain to Source Voltage (Vdss)
-30 V
Element Configuration
Single
Fall Time
26 ns
Gate to Source Voltage (Vgs)
25 V
Input Capacitance
2.865 nF
Max Junction Temperature (Tj)
150 °C
Max Operating Temperature
150 °C
Max Power Dissipation
36 W
Min Operating Temperature
-55 °C
Number of Channels
1
Number of Elements
1
Power Dissipation
36 W
Rds On Max
14.4 mΩ
Resistance
14.4 MΩ
Rise Time
10 ns
Threshold Voltage
-1.9 V
Turn-Off Delay Time
44 ns
Turn-On Delay Time
11 ns

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