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onsemi FDMC3612

N-Channel Power Trench MOSFET 100V, 12A, 110m

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Compliance

Lead Free
Lead Free
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS
Compliant

Dimensions

Height
800 µm
Length
3.3 mm
Width
3.3 mm

Physical

Contact Plating
Gold
Mount
Surface Mount
Number of Pins
8
Weight
180 mg

Supply Chain

Lifecycle Status
Production

Technical

Continuous Drain Current (ID)
3.3 A
Drain to Source Breakdown Voltage
100 V
Drain to Source Resistance
92 mΩ
Drain to Source Voltage (Vdss)
100 V
Element Configuration
Single
Fall Time
2 ns
Gate to Source Voltage (Vgs)
20 V
Input Capacitance
880 pF
Max Junction Temperature (Tj)
150 °C
Max Operating Temperature
150 °C
Max Power Dissipation
35 W
Min Operating Temperature
-55 °C
Nominal Vgs
2.5 V
Number of Channels
1
Number of Elements
1
Power Dissipation
2.3 W
Rds On Max
110 mΩ
Rise Time
2.8 ns
Threshold Voltage
2.5 V
Turn-Off Delay Time
19 ns
Turn-On Delay Time
7.4 ns

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