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onsemi FDMC2610

N-Channel Trench MOSFET, UltraFET, 200V, 9.5A, 200m

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Compliance

Lead Free
Lead Free
RoHS
Compliant

Dimensions

Height
800 µm
Length
3 mm
Width
3 mm

Physical

Contact Plating
Tin
Mount
Surface Mount
Number of Pins
8
Weight
165.33333 mg

Supply Chain

Lifecycle Status
Production

Technical

Continuous Drain Current (ID)
2.2 A
Current Rating
9.5 A
Drain to Source Breakdown Voltage
200 V
Drain to Source Resistance
200 mΩ
Drain to Source Voltage (Vdss)
200 V
Element Configuration
Single
Fall Time
16 ns
Gate to Source Voltage (Vgs)
20 V
Input Capacitance
960 pF
Max Junction Temperature (Tj)
150 °C
Max Operating Temperature
150 °C
Max Power Dissipation
2.1 W
Min Operating Temperature
-55 °C
Number of Channels
1
Number of Elements
1
Power Dissipation
42 W
Rds On Max
200 mΩ
Resistance
200 MΩ
Rise Time
13 ns
Turn-Off Delay Time
29 ns
Turn-On Delay Time
17 ns
Voltage Rating (DC)
220 V

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