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onsemi FDMB3900AN

Dual N-Channel Power Trench MOSFET 25V, 7.0A, 23m

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Compliance

Radiation Hardening
No
RoHS
Compliant

Dimensions

Height
800 µm
Length
3 mm
Width
1.9 mm

Physical

Mount
Surface Mount
Number of Pins
8
Weight
60 µg

Supply Chain

Lifecycle Status
EOL

Technical

Continuous Drain Current (ID)
7 A
Drain to Source Breakdown Voltage
25 V
Drain to Source Resistance
19 mΩ
Drain to Source Voltage (Vdss)
25 V
Element Configuration
Dual
Fall Time
3 ns
Gate to Source Voltage (Vgs)
20 V
Input Capacitance
890 pF
Max Junction Temperature (Tj)
150 °C
Max Operating Temperature
150 °C
Max Power Dissipation
800 mW
Min Operating Temperature
-55 °C
Number of Channels
2
Number of Elements
2
Packaging
Tape and Reel
Power Dissipation
800 mW
Rds On Max
23 mΩ
Rise Time
3 ns
Turn-Off Delay Time
15 ns
Turn-On Delay Time
6 ns

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