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onsemi FDMB3800N

Dual N-Channel PowerTrench MOSFET 30V, 4.8A, 40m

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Compliance

Lead Free
Lead Free
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS
Compliant

Dimensions

Height
800 µm
Length
3 mm
Width
1.9 mm

Physical

Mount
Surface Mount
Number of Pins
8
Weight
47 mg

Supply Chain

Lifecycle Status
Production

Technical

Continuous Drain Current (ID)
4.8 A
Drain to Source Breakdown Voltage
30 V
Drain to Source Resistance
32 mΩ
Drain to Source Voltage (Vdss)
30 V
Element Configuration
Dual
Fall Time
5 ns
Gate to Source Voltage (Vgs)
20 V
Input Capacitance
465 pF
Max Junction Temperature (Tj)
150 °C
Max Operating Temperature
150 °C
Max Power Dissipation
1.6 W
Min Operating Temperature
-55 °C
Nominal Vgs
1.9 V
Number of Channels
2
Number of Elements
2
Power Dissipation
1.6 W
Rds On Max
40 mΩ
Resistance
40 MΩ
Rise Time
5 ns
Threshold Voltage
1.9 V
Turn-Off Delay Time
21 ns
Turn-On Delay Time
8 ns

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