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onsemi FDI045N10A-F102

PowerTrench MOSFET, N-Channel, 100V, 164A, 4.5m

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Compliance

Radiation Hardening
No
RoHS
Compliant

Dimensions

Height
9.65 mm
Length
10.29 mm
Width
4.83 mm

Physical

Case/Package
TO-262
Mount
Through Hole
Number of Pins
3
Weight
2.084 g

Supply Chain

Lifecycle Status
Production

Technical

Continuous Drain Current (ID)
120 A
Drain to Source Breakdown Voltage
100 V
Drain to Source Resistance
3.8 mΩ
Drain to Source Voltage (Vdss)
100 V
Element Configuration
Single
Fall Time
15 ns
Gate to Source Voltage (Vgs)
20 V
Input Capacitance
5.27 nF
Max Operating Temperature
175 °C
Max Power Dissipation
263 W
Min Operating Temperature
-55 °C
Number of Elements
1
Power Dissipation
263 W
Rds On Max
4.5 mΩ
Rise Time
26 ns
Turn-Off Delay Time
50 ns
Turn-On Delay Time
23 ns

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