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onsemi FDG6322C

Transistor: N+P-MOSFET; unipolar; 25V/-25V; 0.22A/-0.41A; 4/1.1ohm; 0.3W; -55+150 deg.C; SMD; SC70-6

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Compliance

Lead Free
Lead Free
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS
Compliant

Dimensions

Height
1.1 mm
Length
2 mm
Width
1.25 mm

Physical

Case/Package
SC
Mount
Surface Mount
Number of Pins
6
Weight
28 mg

Supply Chain

Lifecycle Status
Production

Technical

Continuous Drain Current (ID)
410 mA
Current Rating
220 mA
Drain to Source Breakdown Voltage
25 V
Drain to Source Resistance
4 Ω
Drain to Source Voltage (Vdss)
25 V
Element Configuration
Dual
Fall Time
8 ns
Gate to Source Voltage (Vgs)
8 V
Input Capacitance
9.5 pF
Max Junction Temperature (Tj)
150 °C
Max Operating Temperature
150 °C
Max Power Dissipation
300 mW
Min Operating Temperature
-55 °C
Nominal Vgs
850 mV
Number of Channels
2
Number of Elements
2
Packaging
Cut Tape
Power Dissipation
300 mW
Rds On Max
4 Ω
Resistance
4 Ω
Rise Time
8 ns
Threshold Voltage
850 mV
Turn-Off Delay Time
55 ns

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