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onsemi FDG6308P

Transistor, Mosfet, Matched Pair, P-channel, 20V V(br)dss, 600MA I(d), TSOP

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Compliance

Lead Free
Lead Free
Radiation Hardening
No
RoHS
Compliant

Dimensions

Height
1 mm
Length
2 mm
Width
1.25 mm

Physical

Case/Package
SC
Mount
Surface Mount
Number of Pins
6
Weight
28 mg

Supply Chain

Lifecycle Status
EOL

Technical

Continuous Drain Current (ID)
600 mA
Current Rating
-600 mA
Drain to Source Breakdown Voltage
-20 V
Drain to Source Resistance
400 mΩ
Drain to Source Voltage (Vdss)
20 V
Element Configuration
Dual
Fall Time
15 ns
Gate to Source Voltage (Vgs)
8 V
Input Capacitance
153 pF
Max Operating Temperature
150 °C
Max Power Dissipation
300 mW
Min Operating Temperature
-55 °C
Number of Elements
2
Power Dissipation
300 mW
Rds On Max
400 mΩ
Resistance
400 MΩ
Rise Time
15 ns
Turn-Off Delay Time
7 ns
Turn-On Delay Time
5 ns
Voltage Rating (DC)
-20 V

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