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onsemi FDG327N

Transistor, Mosfet, N-channel, 20V V(br)dss, 1.5A I(d), SOT-363

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Compliance

Lead Free
Lead Free
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS
Compliant

Dimensions

Height
1 mm
Length
2 mm
Width
1.25 mm

Physical

Case/Package
SC
Contact Plating
Tin
Mount
Surface Mount
Number of Pins
6
Number of Terminals
6
Weight
28 mg

Supply Chain

Lifecycle Status
EOL

Technical

Continuous Drain Current (ID)
1.5 A
Current Rating
1.5 A
Drain to Source Breakdown Voltage
20 V
Drain to Source Resistance
57 mΩ
Drain to Source Voltage (Vdss)
20 V
Element Configuration
Single
Fall Time
6.5 ns
Gate to Source Voltage (Vgs)
8 V
Input Capacitance
423 pF
Max Operating Temperature
150 °C
Max Power Dissipation
420 mW
Min Breakdown Voltage
20 V
Min Operating Temperature
-55 °C
Nominal Vgs
700 mV
Number of Elements
1
Power Dissipation
420 mW
Rds On Max
90 mΩ
Resistance
90 mΩ
Rise Time
6.5 ns
Threshold Voltage
700 mV
Turn-Off Delay Time
14 ns
Turn-On Delay Time
6 ns
Voltage Rating (DC)
20 V

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