跳转到主要内容

onsemi FDFS2P753Z

Integrated P-Channel PowerTrench MOSFET and Schottky Diode -30V, -3A, 115m

产品详情

Find similar products  

Compliance

Lead Free
Lead Free
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS
115 MΩ

Dimensions

Height
1.575 mm
Length
4.9 mm
Width
3.9 mm

Physical

Case/Package
SOIC
Mount
Surface Mount
Number of Pins
8
Weight
230.4 mg

Technical

Continuous Drain Current (ID)
3:00 AM
Current Rating
3 A
Drain to Source Breakdown Voltage
-30 V
Drain to Source Resistance
115 mΩ
Drain to Source Voltage (Vdss)
30 V
Element Configuration
Single
Fall Time
31 ns
Forward Current
2 mA
Gate to Source Voltage (Vgs)
25 V
Input Capacitance
455 pF
Max Operating Temperature
150 °C
Max Power Dissipation
1.6 W
Min Operating Temperature
-55 °C
Number of Elements
1
Packaging
Cut Tape
Power Dissipation
1.6 W
Rds On Max
115 mΩ
Resistance
115 MΩ
Rise Time
115 mΩ
Threshold Voltage
Compliant
Turn-Off Delay Time
18 ns
Turn-On Delay Time
IBS
Voltage Rating (DC)
-30 V

合规性文件

购买

Call or Request Quote for Pricing
询价

Need Assistance?

Contact Us