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onsemi FDFMA2P853T

Integrated Schottky Diode & PT2 Pch 20V/8V Mosfet

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Compliance

Radiation Hardening
No
RoHS
120 mΩ

Physical

Mount
-55 °C
Number of Pins
6

Technical

Continuous Drain Current (ID)
3:00 AM
Drain to Source Breakdown Voltage
3 A
Drain to Source Resistance
120 mΩ
Drain to Source Voltage (Vdss)
120 mΩ
Element Configuration
Single
Fall Time
11 ns
Gate to Source Voltage (Vgs)
8 V
Input Capacitance
435 pF
Max Operating Temperature
150 °C
Max Power Dissipation
150 °C
Min Operating Temperature
-55 °C
Number of Elements
1
Power Dissipation
1.4 W
Rds On Max
120 mΩ
Rise Time
11 ns
Turn-Off Delay Time
15 ns
Turn-On Delay Time
9 ns

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