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onsemi FDFMA2P853

Integrated P-Channel PowerTrench MOSFET and Schottky Diode -20V , -3.0A, 120m

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Compliance

Lead Free
Lead Free
Radiation Hardening
No
RoHS
120 MΩ

Dimensions

Height
750 µm
Length
2 mm
Width
2 mm

Physical

Mount
Surface Mount
Number of Pins
6
Weight
IBS

Supply Chain

Lifecycle Status
Obsolete

Technical

Collector Emitter Breakdown Voltage
2 V
Continuous Drain Current (ID)
3:00 AM
Drain to Source Breakdown Voltage
3 A
Drain to Source Resistance
120 mΩ
Drain to Source Voltage (Vdss)
20 V
Element Configuration
Single
Fall Time
11 ns
Gate to Source Voltage (Vgs)
8 V
Input Capacitance
435 pF
Max Operating Temperature
150 °C
Max Power Dissipation
700 mW
Min Operating Temperature
-55 °C
Number of Elements
1
Power Dissipation
1.4 W
Rds On Max
120 mΩ
Resistance
120 MΩ
Rise Time
120 mΩ
Turn-Off Delay Time
Compliant
Turn-On Delay Time
9 ns

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