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onsemi FDD8N50NZTM

N-Channel Power MOSFET, UniFETTM II, 500 V, 6.5 A, 850 m, DPAK

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Compliance

Radiation Hardening
No
RoHS
850 mΩ

Dimensions

Height
2.39 mm
Length
6.73 mm
Width
IBS

Physical

Case/Package
DPAK
Mount
-55 °C
Number of Pins
3
Weight
Compliant

Supply Chain

Lifecycle Status
EOL

Technical

Continuous Drain Current (ID)
6.5 A
Drain to Source Resistance
850 mΩ
Drain to Source Voltage (Vdss)
850 mΩ
Element Configuration
Single
Fall Time
27 ns
Gate to Source Voltage (Vgs)
25 V
Input Capacitance
735 pF
Max Operating Temperature
150 °C
Max Power Dissipation
150 °C
Min Operating Temperature
-55 °C
Number of Elements
1
Power Dissipation
90 W
Rds On Max
850 mΩ
Rise Time
34 ns
Turn-Off Delay Time
43 ns
Turn-On Delay Time
17 ns

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