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onsemi FDD8896

Transistor, Mosfet, N-channel, 30V V(br)dss, 17A I(d), TO-252AA

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Compliance

Lead Free
Lead Free
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS
Compliant

Dimensions

Height
2.39 mm
Length
6.73 mm
Width
6.22 mm

Physical

Case/Package
DPAK
Contact Plating
Tin
Mount
Surface Mount
Number of Pins
3
Weight
260.37 mg

Supply Chain

Lifecycle Status
Production

Technical

Continuous Drain Current (ID)
94 A
Current Rating
94 A
Drain to Source Breakdown Voltage
30 V
Drain to Source Resistance
5.7 mΩ
Drain to Source Voltage (Vdss)
30 V
Element Configuration
Single
Fall Time
41 ns
Gate to Source Voltage (Vgs)
20 V
Input Capacitance
2.525 nF
Max Operating Temperature
175 °C
Max Power Dissipation
80 W
Min Operating Temperature
-55 °C
Number of Elements
1
Power Dissipation
80 W
Rds On Max
5.7 mΩ
Resistance
5.7 MΩ
Rise Time
106 ns
Threshold Voltage
2.5 V
Turn-Off Delay Time
53 ns
Turn-On Delay Time
9 ns
Voltage Rating (DC)
30 V

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