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onsemi FDD8880

PowerTrench MOSFET, N-Channel, 30V, 58A, 9m

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Compliance

Lead Free
Lead Free
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS
9 MΩ

Dimensions

Height
2.39 mm
Length
6.73 mm
Width
6.22 mm

Physical

Case/Package
DPAK
Contact Plating
Tin
Mount
-55 °C
Number of Pins
3
Weight
260.37 mg

Supply Chain

Lifecycle Status
Production

Technical

Continuous Drain Current (ID)
58 A
Current Rating
58 A
Drain to Source Breakdown Voltage
30 V
Drain to Source Resistance
7 mΩ
Drain to Source Voltage (Vdss)
7 mΩ
Element Configuration
Single
Fall Time
32 ns
Gate to Source Voltage (Vgs)
20 V
Input Capacitance
2.517 mm
Max Junction Temperature (Tj)
175 °C
Max Operating Temperature
175 °C
Max Power Dissipation
175 °C
Min Operating Temperature
-55 °C
Number of Channels
1
Number of Elements
1
Power Dissipation
55 W
Rds On Max
9 mΩ
Resistance
9 MΩ
Rise Time
9 mΩ
Threshold Voltage
91 ns
Turn-Off Delay Time
Compliant
Turn-On Delay Time
8 ns
Voltage Rating (DC)
IBS

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