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onsemi FDD8876

Transistor, mosfet, n-Channel, 30V V(Br)Dss, 15A I(D), to-252Aa Rohs Compliant: Yes

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Compliance

Lead Free
Lead Free
Radiation Hardening
No
RoHS
Compliant

Dimensions

Height
2.517 mm

Physical

Case/Package
TO-252-3
Mount
Surface Mount
Number of Pins
3
Weight
260.37 mg

Supply Chain

Lifecycle Status
EOL

Technical

Continuous Drain Current (ID)
15 A
Current Rating
73 A
Drain to Source Breakdown Voltage
30 V
Drain to Source Resistance
6.6 mΩ
Drain to Source Voltage (Vdss)
30 V
Element Configuration
Single
Fall Time
37 ns
Gate to Source Voltage (Vgs)
20 V
Input Capacitance
1.7 nF
Max Junction Temperature (Tj)
175 °C
Max Operating Temperature
175 °C
Max Power Dissipation
70 W
Min Operating Temperature
-55 °C
Number of Channels
1
Number of Elements
1
Packaging
Tape & Reel
Power Dissipation
70 W
Rds On Max
8.2 mΩ
Rise Time
91 ns
Turn-Off Delay Time
44 ns
Turn-On Delay Time
8 ns
Voltage Rating (DC)
30 V

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