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onsemi FDD8874

PowerTrench MOSFET, N-Channel, 30V, 116A, 5.1m

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Compliance

Lead Free
Lead Free
Radiation Hardening
No
RoHS
5.1 mΩ

Dimensions

Height
2.517 mm

Physical

Case/Package
TO-252-3
Contact Plating
Tin
Mount
-55 °C
Number of Pins
3
Weight
IBS

Supply Chain

Lifecycle Status
EOL

Technical

Continuous Drain Current (ID)
116 A
Current Rating
116 A
Drain to Source Breakdown Voltage
30 V
Drain to Source Resistance
5.1 mΩ
Drain to Source Voltage (Vdss)
5.1 mΩ
Element Configuration
Single
Fall Time
37 ns
Gate to Source Voltage (Vgs)
20 V
Input Capacitance
2.99 nF
Max Junction Temperature (Tj)
OBSOLETE
Max Operating Temperature
175 °C
Max Power Dissipation
175 °C
Min Operating Temperature
-55 °C
Number of Channels
1
Number of Elements
1
Power Dissipation
110 W
Rds On Max
5.1 mΩ
Rise Time
96 ns
Turn-Off Delay Time
47 ns
Turn-On Delay Time
Compliant
Voltage Rating (DC)
30 V

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