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onsemi FDD86326

Shielded Gate PowerTrench MOSFET, N-Channel, 80 V, 37 A, 23 m

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Compliance

Radiation Hardening
No
REACH SVHC
No SVHC
RoHS
Compliant

Dimensions

Height
2.517 mm
Length
6.73 mm
Width
6.22 mm

Physical

Case/Package
TO-252
Mount
Surface Mount
Number of Pins
3
Weight
260.37 mg

Supply Chain

Lifecycle Status
Production

Technical

Continuous Drain Current (ID)
8 A
Drain to Source Breakdown Voltage
80 V
Drain to Source Resistance
19 mΩ
Drain to Source Voltage (Vdss)
80 V
Element Configuration
Single
Fall Time
2.9 ns
Gate to Source Voltage (Vgs)
20 V
Input Capacitance
1.035 nF
Max Junction Temperature (Tj)
150 °C
Max Operating Temperature
150 °C
Max Power Dissipation
62 W
Min Operating Temperature
-55 °C
Nominal Vgs
3.1 V
Number of Channels
1
Number of Elements
1
Power Dissipation
3.1 W
Rds On Max
23 mΩ
Rise Time
3 ns
Threshold Voltage
3.1 V
Turn-Off Delay Time
13.4 ns
Turn-On Delay Time
7.6 ns

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