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onsemi FDD86102LZ

Shielded Gate PowerTrench® MOSFET, N-Channel, 100 V, 35 A, 22.5 mΩ

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Compliance

Radiation Hardening
No
REACH SVHC
No SVHC
RoHS
22.5 mΩ

Dimensions

Height
2.39 mm
Length
6.73 mm
Width
6.22 mm

Physical

Case/Package
DPAK
Mount
-55 °C
Number of Pins
3
Weight
IBS

Supply Chain

Lifecycle Status
Production

Technical

Continuous Drain Current (ID)
8:00 AM
Drain to Source Breakdown Voltage
8 A
Drain to Source Resistance
100 V
Drain to Source Voltage (Vdss)
17.8 mΩ
Element Configuration
100 V
Fall Time
2.3 ns
Gate to Source Voltage (Vgs)
20 V
Input Capacitance
2.517 mm
Max Junction Temperature (Tj)
N
Max Operating Temperature
150 °C
Max Power Dissipation
150 °C
Min Operating Temperature
54 W
Nominal Vgs
-55 °C
Number of Channels
1.5 V
Number of Elements
1
Packaging
Tape & Reel (TR)
Power Dissipation
3.1 W
Rds On Max
22.5 mΩ
Rise Time
2.3 ns
Threshold Voltage
1.5 V
Turn-Off Delay Time
Compliant
Turn-On Delay Time
Compliant

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