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onsemi FDD850N10L

PowerTrench MOSFET, N-Channel, 100V, 15.7A, 75m

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Compliance

Radiation Hardening
No
RoHS
Compliant

Dimensions

Height
2.39 mm
Length
6.73 mm
Width
6.22 mm

Physical

Case/Package
DPAK
Mount
-55 °C
Number of Pins
3
Weight
260.37 mg

Supply Chain

Lifecycle Status
Production

Technical

Continuous Drain Current (ID)
15.7 A
Drain to Source Breakdown Voltage
100 V
Drain to Source Resistance
64 mΩ
Drain to Source Voltage (Vdss)
64 mΩ
Element Configuration
Single
Fall Time
8 ns
Gate to Source Voltage (Vgs)
20 V
Input Capacitance
1.465 nF
Max Operating Temperature
175 °C
Max Power Dissipation
175 °C
Min Operating Temperature
-55 °C
Number of Elements
1
Power Dissipation
50 W
Rds On Max
75 mΩ
Rise Time
21 ns
Turn-Off Delay Time
75 mΩ
Turn-On Delay Time
17 ns

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